期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2023, vol.52, no.1 2023, vol.52, no.2 2023, vol.52, no.3 2023, vol.52, no.4 2023, vol.52, no.5 2023, vol.52, no.6
2023, vol.52, no.7

题名作者出版年年卷期
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing RadiationGlushko A. A.; Morozov S. A.; Chistyakov M. G.20232023, vol.52, no.4
Formation of Polymer Threads with a Nanosized Aluminum TopologyMaltsev P. P.; Ganzha A. A.; Pavlov V. Yu.; Mikhalev A. O.; Kozlitin A. I.20232023, vol.52, no.4
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin FilmKuznetsova I. A.; Savenko O. V.; Romanov D. N.20232023, vol.52, no.4
Single Event Displacement Effects in a VLSIChumakov A. I.20232023, vol.52, no.4
Influence of Structural Defects on the Electrophysical Parameters of pin-PhotodiodesKoval’chuk N. S.; Lastovskii S. B.; Odzhaev V. B.; Petlitskii A. N.; Prosolovich V. S.; Shestovsky D. V.; Yavid V. Yu.; Yankovskii Yu. N.20232023, vol.52, no.4
Polymer Liners with Cu-MWCNT based HCTSVs to Reduce Crosstalk EffectsKatepogu Rajkumar; G. Umamaheswara Reddy20232023, vol.52, no.4
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room TemperatureSaenko A. V.; Vakulov Z. E.; Klimin V. S.; Bilyk G. E.; Malyukov S. P.20232023, vol.52, no.4
Tomography of Detectors Taking Dead Time into AccountBogdanov Yu. I.; Katamadze K. G.; Borshchevskaya N. A.; Avosopiants G. V.; Bogdanova N. A.; Kulik S. P.; Lukichev V. F.20232023, vol.52, no.4
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 MixturesEfremov A. M.; Bobylev A. V.; Kwon K.-H.20232023, vol.52, no.4
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial FilmsTulina N. A.; Rossolenko A. N.; Borisenko I. Y.; Ivanov A. A.20232023, vol.52, no.4
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