期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2023, vol.52, no.1 2023, vol.52, no.2 2023, vol.52, no.3 2023, vol.52, no.4 2023, vol.52, no.5 2023, vol.52, no.6
2023, vol.52, no.7

题名作者出版年年卷期
Investigation of the Optical Properties of Ultrathin Films Based on Metal SilicideKerimov E. A.20232023, vol.52, no.2
Design of Ternary Multiplier Using Pseudo NCNTFETsRatan Kumar S. V.; Koteswara Rao L.; Kiran Kumar M.20232023, vol.52, no.2
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar MixtureEfremov A. M.; Betelin V. B.; Kwon K.-H.20232023, vol.52, no.2
Oxide Memristors for ReRAM: Approaches, Characteristics, and StructuresIsaev A. G.; Permyakova O. O.; Rogozhin A. E.20232023, vol.52, no.2
Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT DeviceMaryam Shaveisi; Peiman Aliparast20232023, vol.52, no.2
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing MicrocircuitsNovikov Yu. A.; Filippov M. N.20232023, vol.52, no.2
Cross Sections of Scattering Processes in Electron-Beam LithographyRogozhin A. E.; Sidorov F. A.20232023, vol.52, no.2
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of MicroresonatorsTsukanov A. V.; Kateev I. Yu.20232023, vol.52, no.2



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