期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2024



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023 2024

2023, vol.52, no.1 2023, vol.52, no.2 2023, vol.52, no.3 2023, vol.52, no.4 2023, vol.52, no.5 2023, vol.52, no.6
2023, vol.52, no.7 2023, vol.52, no.8 2023, vol.52, no.Suppl.1

题名作者出版年年卷期
Simulation of the Polarization-Resolved Spectra of VCSEL 20232023, vol.52, no.Suppl.1
Atypical Raman Scattering on Magnetic Junctions in Metallic Nanowires 20232023, vol.52, no.Suppl.1
Some Properties of Argon as an Actinometric Atom. I. Metastable Levels Excitation 20232023, vol.52, no.Suppl.1
Post-Processing of Random Number Generator in InGaAs Contact Photodiode Homodyne Circuit Based on Continuous Wavelet Transform to Improve NIST Longest Run Test Pass Rate 20232023, vol.52, no.Suppl.1
High-Precision Quantum Measurements of Qudits Taking into Account the Influence of Amplitude and Phase Relaxation 20232023, vol.52, no.Suppl.1
Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys 20232023, vol.52, no.Suppl.1
Finite-Element Simulation of the Performance of a Temperature-Compensated Membrane-Based Thermal Flow Sensor 20232023, vol.52, no.Suppl.1
Investigation of the Influence of the Buffer Layer Design in a GaN HEMT Transistor on the Breakdown Characteristics 20232023, vol.52, no.Suppl.1
Proposals for Development of the Prospective System for Optical Quality Control of the Assembly of Microelectronic Devices 20232023, vol.52, no.Suppl.1
Technological Approaches for Formation of High-Density Integral Capacitors: Deep Etching and Atomic Layer Deposition 20232023, vol.52, no.Suppl.1
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