期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2022, vol.51, no.1 2022, vol.51, no.2 2022, vol.51, no.3 2022, vol.51, no.4 2022, vol.51, no.5 2022, vol.51, no.6
2022, vol.51, no.7 2022, vol.51, no.8

题名作者出版年年卷期
Mathematical Modeling of the Perovskite and Double Perovskite Crystal StructureSechenykh P. A.20222022, vol.51, no.8
Analysis of Hydrodynamics in the Synthesis of Crystals from Water-Salt SolutionsProstomolotov A. I.; Verezub N. A.20222022, vol.51, no.8
The Study of Nickel Impurity Segregation on LSNT Perovskite Open Surfaces by Ab Initio Molecular DynamicsChistyakova A. A.; Bazhanov D. I.20222022, vol.51, no.8
Studies of the Interaction of Modified Nitro Group Boron-Nitride Nanotubes with Gas-Phase Carbon-Containing Molecules to Create Sensor DevicesBoroznina N. P.; Zaporotskova I. V.; Zaporotskov P. A.; Kozhitov L. V.; Erofeev D. R.20222022, vol.51, no.8
Carbon Nanotubes Intercalated by Metal Atoms with Impurity Boron Atoms as a Base for Creating Nanowires: Theoretical StudiesBoroznin S. V.; Zaporotskova I. V.; Zaporotskov P. A.; Boroznina N. P.; Govindhasamy M.; Kozhitov L. V.; Popkova A. V.20222022, vol.51, no.8
Analysis and Comparison of Different Approaches to the Extraction of Parameters of the Memristor ModelShamin E. S.; Gornev E. S.20222022, vol.51, no.8
Calculation of the Kapitza Resistance at the Silicon-Alpha Quartz Interface for Various TemperaturesAbgaryan K. K.; Kolbin I. S.20222022, vol.51, no.8
Effect of Treatment in Nitrogen Plasma on the Electrical Parameters of AlGaN/GaN HeterostructuresEnisherlova K. L.; Seidman L. A.; Bogolyubova S. Yu.20222022, vol.51, no.8
Accounting for Heat Release in Small Volumes of Matter on the Example of the Growth of ZnO Microrods: Search for a Modeling TechniqueMatyushkin I. V.; Telminov O. A.; Mikhaylov A. N.20222022, vol.51, no.8
Temperature Studies of Hall Field Sensors Based on Nanosized Silicon-on-Insulator HeterostructuresAbgaryan K. K.; Leonov A. V.; Reviznikov D. L.20222022, vol.51, no.8
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