期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2022, vol.51, no.1 2022, vol.51, no.2 2022, vol.51, no.3 2022, vol.51, no.4 2022, vol.51, no.5 2022, vol.51, no.6
2022, vol.51, no.7 2022, vol.51, no.8

题名作者出版年年卷期
Design of Cu-MWCNT Based Heterogeneous Coaxial through Silicon Vias for High-Speed VLSI ApplicationsRajkumar Katepogu; Reddy G. Umamaheswara20222022, vol.51, no.6
On the Effect of the Cl2 + O2 + Ar Mixture Composition on the Concentrations of Chlorine and Oxygen Atoms in a PlasmaAmirov I. I.; Izyumov M. O.; Efremov A. M.20222022, vol.51, no.6
Electroluminescence in p-GaP/por-GaP/SnO2 Structures in the Red Region of the SpectrumDikhanbaev K. K.; Jamayeva U. A.; Korobova N. E.; Ikramova S. B.20222022, vol.51, no.6
Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs TransistorLokotko V. V.; Vasil’evskii I. S.; Kargin N. I.20222022, vol.51, no.6
Electrophysical Characteristics and Emission Spectra of Carbon Tetrafluoride PlasmaMurin D. B.; Pivovarenok S. A.; Chesnokov I. A.; Gogulev I. A.20222022, vol.51, no.6
Effect of Ion-Plasma Treatment on the Phase Composition and Electrical Resistivity of Nanometer-Thick Tungsten FilmsSelyukov R. V.; Amirov I. I.; Naumov V. V.20222022, vol.51, no.6
Method for the Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Based on Integrated MOS TransistorsSinyukin A. S.; Kovalev A. V.20222022, vol.51, no.6
Parameters of Gaseous Phase and Kinetics of Reactive Ion Etching of SiO2 in CF4/C4F8/Ar/He PlasmaEfremov A. M.; Kwon K.-H.20222022, vol.51, no.6
Electron Detection Circuit Based on a Tunnel Structure of Four Quantum Dots with Asymmetric ParametersTsukanov A. V.20222022, vol.51, no.6
Magneto-Optical Properties of Multilayer Structures Based on Cobalt and Chromium-Group Metals for Magnetic Memory ElementsProkaznikov A. V.; Paporkov V. A.; Selyukov R. V.; Vasilev S. V.; Savenko O. V.20222022, vol.51, no.6
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