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2022, vol.51, no.1	2022, vol.51, no.2	2022, vol.51, no.3	2022, vol.51, no.4	2022, vol.51, no.5	2022, vol.51, no.6
2022, vol.51, no.7	2022, vol.51, no.8

题名	作者	出版年	年卷期
Masking Noise Pulses When Collecting a Charge from the Tracks of Single Ionizing Particles in a Majority Element Based on CMOS NAND Logic	V. Ya. Stenin; Yu. V. Katunin	2022	2022, vol.51, no.1
Limitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators	A. I. Chumakov; A. V. Sogoyan; A. V. Yanenko	2022	2022, vol.51, no.1
Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO 2 in Hydrogen Plasma of Electronic-Cyclotron Resonance	R. M. Kh. Iskhakzay; V. N. Kruchinin; V. Sh. Aliev; V. A. Gritsenko; E. V. Dementieva; M. V. Zamoryanskaya	2022	2022, vol.51, no.1
Controlling the Position of a Magnetic Vortex on a Nanostructured Surface in Magnetic Memory Elements	A. V. Prokaznikov; V. A. Paporkov; V. A. Chirikov	2022	2022, vol.51, no.1