期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2021, vol.50, no.1 2021, vol.50, no.2 2021, vol.50, no.3 2021, vol.50, no.4 2021, vol.50, no.5 2021, vol.50, no.6
2021, vol.50, no.8

题名作者出版年年卷期
Physical and Topological Modeling of a Volume Condenser Structure with a Schottky BarrierD. S. Gaev; A. N. Boyko; S. Sh. Rekhviashvili20212021, vol.50, no.5
Energy and Noise Characteristics of a SEPIC/CuK Converter with Bipolar OutputV. P. Babenko; V. K. Bityukov20212021, vol.50, no.5
To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention TimeA. V. Fadeev; K. V. Rudenko20212021, vol.50, no.5
Thin-Film Solid State Lithium-Ion Batteries of the LiCoC2/LiPON/Si@O@Al SystemA. S. Rudy; A. A. Mironenko; V. V. Naumov; I. S. Fedorov; A. M. Skundin; Yu. S. Tortseva20212021, vol.50, no.5
Study of the Plasma Resistance of a High Resolution e-Beam Resist HSQ for Prototyping Nanoelectronic DevicesA. V. Miakonkikh; A. V. Shishlyannikov; A. A. Tatarintsev; V. O. Kuzmenko; K. V. Rudenko; E. S. Gornev20212021, vol.50, no.5
Influence of Point Defects on the Initiation of Electromigration in an Impurity ConductorT. M. Makhviladze; M. E. Sarychev20212021, vol.50, no.5
Schmidt Decomposition and Coherence of Interfering AlternativesD. V. Fastovets; Yu. I. Bogdanov; N. A. Bogdanova; V. F. Lukichev20212021, vol.50, no.5
Specific Features of the Kinetics of the Reactive-Ion Etching of Si and SiO2in a CF4+ O2Mixture in a Low Power Supply ModeA. M. Efremov; V. B. Betelin; K.-H. Kwon20212021, vol.50, no.5
Computer Investigation of the Influence of Metal Contact Inhomogenees on Resistive Switching in a Heterostructure Based on Bismuth SelenideV. V. Sirotkin20212021, vol.50, no.5
Implementation of Interpolation in Read-out ASIC for GEM DetectorsV. V. Shumikhin; E. V. Atkin; D. A. Azarov; P. Yu. Ivanov; D. D. Normanov20212021, vol.50, no.5



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