期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO_2 in a Plasma of a Mixture of HBr+O_2A. M. Efremov; V. B. Betelin; K.-H. Kwon20202020, vol.49, no.6
Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon TransistorsT. A. Ismailov; A. R. Shakhmaeva; B. A. Shangereeva20202020, vol.49, no.6
Thermal Atomic Layer Deposition of TiN_x. Using TiCl_4 and N_2H_4A. I. Abdulagatov; M. Kh. Rabadanov; I. M. Abdulagatov20202020, vol.49, no.6
Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80-100 GHz Frequency RangeD. L. Gnatyuk; R. R. Galiev; A. V. Zuev; S. L. Krapukhina; M. V. Maitama; P. P. Maltsev; O. S. Matveenko; Yu. V. Fedorov20202020, vol.49, no.6
Injection Diffusion-Drift Pulse FormerD. S. Gaev; S. Sh. Rekhviashvili20202020, vol.49, no.6
Amorphization of Vanadium Oxides during the Reversible Insertion of LithiumA. M. Skundin; A. A. Mironenko; A. S. Rudyi; I. S. Fedorov; S. V. Vasiliev; L. A. Mazaletsky; Yu. S. Tortseva; O. E. Kuznetsov20202020, vol.49, no.6
Effect of Point Defects on the Electromigration Rate at the Interface of Joined MaterialsT. M. Makhviladze; M. E. Sarychev20202020, vol.49, no.6
Spots Concept for Problems of Artificial Intelligence and Algorithms of Neuromorphic SystemsN. A. Simonov20202020, vol.49, no.6
Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-GateV. I. Egorkin; V. E. Zemlyakov; V. V. Kapaev; O. B. Kukhtyaeva20202020, vol.49, no.6
Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaS_xSe_(1 - x) (0 ≤ x ≤ 1)S. M. Asadov; S. N. Mustafaeva; V. F. Lukichev20202020, vol.49, no.6



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