期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2020 2021 2022 2023

2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Single-Photon Response and Microdisk Spectroscopy in a Diamond SubstrateM. S. Rogachev; I. Yu. Kateev; A. V. Tsukanov20202020, vol.49, no.4
Plasma Parameters and Kinetics of Active Particles in the Mixture CHF_3+O_2+ArA. M. Efremov; D. B. Murin; K.-H. Kwon20202020, vol.49, no.4
Calculation of the Electrical Conductivity of a Thin Cylindrical Conducting Tube Taking into Account the Anisotropy of the Isoenergetic SurfaceI. A. Kuznetsova; D. N. Romanov20202020, vol.49, no.4
Calculation of Performance of MEMS-Switch with Increased Capacitance RatioI. V. Uvarov; N. V. Marukhin; P. S. Shlepakov; V. F. Lukichev20202020, vol.49, no.4
Modifying the Dielectric Properties of the TlGaS_2 Single Crystal by Electron IrradiationS. M. Asadov; S. N. Mustafaeva; V. F. Lukichev20202020, vol.49, no.4
Influence of Oxygen Pressure on Switching in Memoristors Based on Electromoformed Open Sandwich StructuresV. M. Mordvintsev; E. S. Gorlachev; S. E. Kudryavtsev; V. L. Levin20202020, vol.49, no.4
Determination of Thermoelectric Cooling Modes of Heat-Loaded ElectronicsE. N. Vasil'ev20202020, vol.49, no.4
High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme ConditionsS. I. Babkin; S. I. Volkov; A. A. Glushko; S. A. Morozov; A. S. Novoselov; A. A. Stolyarov20202020, vol.49, no.4
Physical Parameters of the Broadband Noise-Generator DiodesV. V. Buslyuk; V. B. Odzhayev; A. K. Panfilenko; A. N. Petlitsky; V. S. Prosolovich; V. A. Filipyenya; Yu. N. Yankovsky20202020, vol.49, no.4



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