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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2019, vol.48, no.1
2019, vol.48, no.2
2019, vol.48, no.3
2019, vol.48, no.4
2019, vol.48, no.5
2019, vol.48, no.6
2019, vol.48, no.7
2019, vol.48, no.8
题名
作者
出版年
年卷期
Studies on Charge Carrier Transport in an Injection Laser with Frequency Modulation of the Optical Radiation
B. G. Konoplev; E. A. Ryndin; I. V. Pisarenko
2019
2019, vol.48, no.7
A study of the Composition of Tellurium Vapor by the Static Method
E. N. Vigdorovich
2019
2019, vol.48, no.7
Simulating and Ensuring the Reliability of the Elements and Joints of Three-Dimensional Microelectronics Modules
A. I. Pogalov; G. A. Blinov; E. Y. Chugunov
2019
2019, vol.48, no.7
Histogram Measurement of ADC Nonlinearities by Using Incomplete-Scale Sine Waves
A. A. Rybakov; N. E. Reznichenko
2019
2019, vol.48, no.7
Junctionless MOS-Transistor with a Low Subthreshold Current
M. A. Korolev; A. S. Klyuchnikov; D. I. Efimova
2019
2019, vol.48, no.7
Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kV
O. V. Sopova; T. B. Kritskaya
2019
2019, vol.48, no.7
Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide
K. O. Petrosyants; D. A. Popov
2019
2019, vol.48, no.7
Development of an Area Image Sensor Pixel for an X-Ray Detector
D. A. Suponnikov; A. N. Putilin; E. A. Tatarinova; Z. G. Zhgunev; A. R. DabagoV
2019
2019, vol.48, no.7
Methods of Improving the Accuracy of Simulating Delays and Peak Currents of Combinational CMOS-Circuits at the Logical Design Level
G. A. Ivanova; D. I. Ryzhova
2019
2019, vol.48, no.7
Studying the Influence of Temperature on the Operation of a Resonator of a Frequency Micromechanical Accelerometer
Aung Thura; B. M. Simonov; S. P. Timoshenkov; V. F. Shilov; Kyaw Myo Aung
2019
2019, vol.48, no.7
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