期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2019, vol.48, no.1 2019, vol.48, no.2 2019, vol.48, no.3 2019, vol.48, no.4 2019, vol.48, no.5 2019, vol.48, no.6
2019, vol.48, no.7 2019, vol.48, no.8

题名作者出版年年卷期
Studies on Charge Carrier Transport in an Injection Laser with Frequency Modulation of the Optical RadiationB. G. Konoplev; E. A. Ryndin; I. V. Pisarenko20192019, vol.48, no.7
A study of the Composition of Tellurium Vapor by the Static MethodE. N. Vigdorovich20192019, vol.48, no.7
Simulating and Ensuring the Reliability of the Elements and Joints of Three-Dimensional Microelectronics ModulesA. I. Pogalov; G. A. Blinov; E. Y. Chugunov20192019, vol.48, no.7
Histogram Measurement of ADC Nonlinearities by Using Incomplete-Scale Sine WavesA. A. Rybakov; N. E. Reznichenko20192019, vol.48, no.7
Junctionless MOS-Transistor with a Low Subthreshold CurrentM. A. Korolev; A. S. Klyuchnikov; D. I. Efimova20192019, vol.48, no.7
Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kVO. V. Sopova; T. B. Kritskaya20192019, vol.48, no.7
Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried OxideK. O. Petrosyants; D. A. Popov20192019, vol.48, no.7
Development of an Area Image Sensor Pixel for an X-Ray DetectorD. A. Suponnikov; A. N. Putilin; E. A. Tatarinova; Z. G. Zhgunev; A. R. DabagoV20192019, vol.48, no.7
Methods of Improving the Accuracy of Simulating Delays and Peak Currents of Combinational CMOS-Circuits at the Logical Design LevelG. A. Ivanova; D. I. Ryzhova20192019, vol.48, no.7
Studying the Influence of Temperature on the Operation of a Resonator of a Frequency Micromechanical AccelerometerAung Thura; B. M. Simonov; S. P. Timoshenkov; V. F. Shilov; Kyaw Myo Aung20192019, vol.48, no.7
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