期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2019, vol.48, no.1 2019, vol.48, no.2 2019, vol.48, no.3 2019, vol.48, no.4 2019, vol.48, no.5 2019, vol.48, no.6
2019, vol.48, no.7 2019, vol.48, no.8

题名作者出版年年卷期
Atomic Layer Deposition of Y_2O_3 Using Tris(butylcyclopentadienyl)yttrium and WaterA. I. Abdulagatov; R. R. Amashaev; Kr. N. Ashurbekova; Sh. M. Ramazanov; D. K. Palchaev; A. M. Maksumova; M. Kh. Rabadanov; I. M. Abdulagatov20192019, vol.48, no.1
Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion EtchingS. V. Derevyashkin; E. A. Soboleva; V. V. Shelkovnikov; A. I. Malyshev; V. P. Korolkov20192019, vol.48, no.1
The Effect of Defects with Deep Levels on the C-V Characteristics of High-Power AlGaN/GaN/SiC HEMTsK. L. Enisherlova; Yu. V. Kolkovskii; E. A. Bobrova; E. M. Temper; S. A. Kapilin20192019, vol.48, no.1
Identification and Excitation Mechanisms of the Lines and Bands of Boron-Containing Components in the Optical Emission Spectra of Low-Temperature BF_3/Ar PlasmasV. P. Kudrya20192019, vol.48, no.1
Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon WafersV. A. Paporkov; A. V. Prokaznikov20192019, vol.48, no.1



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