期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Investigation of a Capacitor Array of a Composite Capacitive Touch PanelA. I. Vlasov; A. I. Krivoshein; D. S. Terent’ev; V. A. Shakhnov20182018, vol.47, no.5
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation LayerT. M. Makhviladze; M. E. Sarychev20182018, vol.47, no.5
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz RadiationV. V. Vyurkov; R. R. Khabutdinov; A. B. Nemtsov; I. A. Semenikhin; M. K. Rudenko; K. V. Rudenko; V. F. Lukichev20182018, vol.47, no.5
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking MechanismI. V. Uvarov; A. N. Kupriyanov20182018, vol.47, no.5
Applications of the Technology of Fast Neutral Particle Beams in Micro- and NanoelectronicsYu. P. Maishev; V. P. Kudrya20182018, vol.47, no.5
Reliability Investigation of 0.18-μm SOI MOS Transistors at High TemperaturesA. S. Benediktov; P. V. Ignatov; A. A. Mikhailov; A. G. Potupchik20182018, vol.47, no.5
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge SubstratesR. I. Batalov; R. M. Bayazitov; H. A. Novikov; I. A. Faizrakhmanov; V. A. Shustov; G. D. Ivlev20182018, vol.47, no.5
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a LaserA. V. Tsukanov; V. G. Chekmachev20182018, vol.47, no.5
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical DimensionA. V. Myakonkikh; K. Yu. Kuvaev; A. A. Tatarintsev; N. A. Orlikovskii; K. V. Rudenko; O. P. Guschin; E. S. Gornev20182018, vol.47, no.5