期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2020 2021 2022 2023

2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS NanotransistorsN. V. Masalsky20182018, vol.47, no.4
Structuring Copper in the Plasma Medium of a High-Frequency DischargeA. V. Dunaev; D. B. Murin20182018, vol.47, no.4
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon CrystalsR. K. Yafarov; V. P. Timoshenkov20182018, vol.47, no.4
A Thin-Film Platform for Chemical Gas SensorsI. V. Roslyakov; K. S. Napolskii; V. S. Stolyarov; E. E. Karpov; A. V. Ivashev; V. N. Surtaev20182018, vol.47, no.4
Features of the Current Flow in Injection Structures Based on PbSnTe:In FilmsD. V. Ishchenko; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova20182018, vol.47, no.4
Quantum Gates with Spin States in Continuous Microwave FieldA. F. Zinovieva; A. V. Nenashev; A. A. Koshkarev; T. S. Zarodnyuk; A. Yu. Gornov; A. V. Dvurechenskii20182018, vol.47, no.4
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF4+ C4F8+ Ar Mixture on the Parameters of Plasma and SiO2/Si Etching SelectivityA. M. Efremov; D. B. Murin; K.-H. Kwon20182018, vol.47, no.4
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N2PlasmaS. A. Pivovarenok20182018, vol.47, no.4