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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2018, vol.47, no.1
2018, vol.47, no.2
2018, vol.47, no.3
2018, vol.47, no.4
2018, vol.47, no.5
2018, vol.47, no.6
2018, vol.47, no.7
2018, vol.47, no.8
题名
作者
出版年
年卷期
Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors
N. V. Masalsky
2018
2018, vol.47, no.4
Structuring Copper in the Plasma Medium of a High-Frequency Discharge
A. V. Dunaev; D. B. Murin
2018
2018, vol.47, no.4
Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals
R. K. Yafarov; V. P. Timoshenkov
2018
2018, vol.47, no.4
A Thin-Film Platform for Chemical Gas Sensors
I. V. Roslyakov; K. S. Napolskii; V. S. Stolyarov; E. E. Karpov; A. V. Ivashev; V. N. Surtaev
2018
2018, vol.47, no.4
Features of the Current Flow in Injection Structures Based on PbSnTe:In Films
D. V. Ishchenko; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova
2018
2018, vol.47, no.4
Quantum Gates with Spin States in Continuous Microwave Field
A. F. Zinovieva; A. V. Nenashev; A. A. Koshkarev; T. S. Zarodnyuk; A. Yu. Gornov; A. V. Dvurechenskii
2018
2018, vol.47, no.4
On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF
4
+ C
4
F
8
+ Ar Mixture on the Parameters of Plasma and SiO
2
/Si Etching Selectivity
A. M. Efremov; D. B. Murin; K.-H. Kwon
2018
2018, vol.47, no.4
The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N
2
Plasma
S. A. Pivovarenok
2018
2018, vol.47, no.4
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