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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
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2018, vol.47, no.1
2018, vol.47, no.2
2018, vol.47, no.3
2018, vol.47, no.4
2018, vol.47, no.5
2018, vol.47, no.6
2018, vol.47, no.7
2018, vol.47, no.8
题名
作者
出版年
年卷期
Simulation of Single Event Effects in STG DICE Memory Cells
Yu. V. Katunin; V. Ya. Stenin
2018
2018, vol.47, no.1
Basic Techniques of Increasing Resolution of Photopolymerizable Compositions
V. M. Treushnikov; S. P. Molodnyakov; V. V. Semenov
2018
2018, vol.47, no.1
Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier Discharge
D. V. Sitanov; S. A. Pivovarenok
2018
2018, vol.47, no.1
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nm
K. V. Rudenko; A. V. Myakon’kikh; A. E. Rogozhin; O. P. Gushchin; V. A. Gvozdev
2018
2018, vol.47, no.1
Simulating the Effects of Internal Mechanical Stresses on the Decomposition Kinetics of a Supersaturated Oxygen Solution in Silicon
T. M. Makhviladze; M. E. Sarychev
2018
2018, vol.47, no.1
A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power Consumption
P. N. Bibilo; N. A. Avdeev; S. N. Kardash; N. A. Kirienko; Yu. Yu. Lankevich; I. P. Loginova; V. I. Romanov; D. I. Cheremisinov; L. D. Cheremisinova
2018
2018, vol.47, no.1
Studying the Thermodynamic Characteristics of Anodic Alumina
A. I. Vorob’eva; D. L. Shimanovich; O. A. Sycheva
2018
2018, vol.47, no.1
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