期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2017, vol.46, no.1 2017, vol.46, no.2 2017, vol.46, no.3 2017, vol.46, no.4 2017, vol.46, no.5 2017, vol.46, no.6
2017, vol.46, no.7 2017, vol.46, no.8

题名作者出版年年卷期
Stability Analysis of Monolithic Integrated Circuit of Microwave Signal Converter to the Influence of Special FactorsK. A. Kagirina; Yu. V. Fedorov; D. V. Lavrukhin; S. A. Gamkrelidze; D. L. Gnatyuk; A. V. Zuev; O. A. Ruban; D. V. Gromov20172017, vol.46, no.3
Methods of Functional-Logic Simulation of Radiation-Induced Failures of Electronic Systems Based on the Fuzzy State Machine ModelV. M. Barbashov; O. A. Kalashnikov20172017, vol.46, no.3
Simulation of Impact of the HCP on the CNT-Nanosensor by the Molecular Dynamics MethodA. V. Sogoyan; D. V. Boychenko; A. V. Demidova20172017, vol.46, no.3
Specifics of Electromagnetic Radiation Effects on Integrated CircuitsP. K. Skorobogatov; O. A. Gerasimchuk; K. A. Epifantsev; V. A. Telets20172017, vol.46, no.3
Functional Testing of Digital Signal Processors in Radiation ExperimentsV. A. Marfin; P. V. Nekrasov; O. A. Kalashnikov; A. Yu. Nikiforov20172017, vol.46, no.3
Resistive Switching in Mesoscopic Heterostructures Based on Nd_(2-x)Ce_xCuO_(4-y) Epitaxial FilmsN. A. Tulina; A. A. Ivanov; A. N. Rossolenko; I. M. Shmytko; A. M. Ionov; R. N. Mozhchil'; I. Yu. Borisenko20172017, vol.46, no.3
Study of Transient Processes in a p-i-n Photodetector Using the Nonstationary Physical-Topological ModelE. A. Ryndin; I. V. Pisarenko20172017, vol.46, no.3
Graphene Flexible Touchscreen with Integrated Analog-Digital ConverterA. I. Vlasov; D. S. Terent'ev; V. A. Shakhnov20172017, vol.46, no.3
Partitioning Very Hard Semiconductor Sapphire Wafers into Monolithic Integrated Circuits Using Laser Controlled Thermal CleavageN. V. Shchavruk; S. V. Redkin; A. A. Trofimov; N. E. Ivanova; A. S. Skripnichenko; V. S. Kondratenko; V. V. Styran20172017, vol.46, no.3
Power Switching Transistors Based on Gallium Nitride Epitaxial HeterostructuresE. V. Erofeev; I. V. Fedin; Y. N. Yurjev20172017, vol.46, no.3
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