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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2016, vol.45, no.1
2016, vol.45, no.2
2016, vol.45, no.3
2016, vol.45, no.4
2016, vol.45, no.5
2016, vol.45, no.6
2016, vol.45, no.7
2016, vol.45, no.8/9
题名
作者
出版年
年卷期
Mathematical Simulation of the Influence of the Doping Concentration on the Drain Current of an SOI Field-Effect Hall Sensor
A. V. Kozlov; M. A. Korolev; S. S. Petrunina
2016
2016, vol.45, no.7
Formation of Nanosized Elements of Microwave Transistor Gates by Ion Beam Lithography
K. K. Lavrentyev; V. K. Nevolin; R. Yu. Rozanov; K. A. Tsarik; A. A. Zaitsev
2016
2016, vol.45, no.7
Study of RF Transistor with Submicron T-Shaped Gate Fabricated by Nanoimprint Lithography
V. I. Egorkin; A. A. Zaitsev; S. S. Shmelev
2016
2016, vol.45, no.7
TCAD Leakage Current Analysis of a 45 nm MOSFET Structure with a High-k Dielectric
K. O. Petrosyants; D. A. Popov; L. M. Sambursky; I. A. Kharitonov
2016
2016, vol.45, no.7
Features of the Effect of the Supply Current on the Operation Mode of an Oscillator Based on an IMPATT Diode Taking into Account the Reflected Signal
A. V. Dem'yanenko
2016
2016, vol.45, no.7
A Method for Calculating the Thermal Characteristics of Silicon TVS-Diodes in the Pulse Mode
F. I. Grigoriev; A. B. Aleksandrova; V. A. Gafurov
2016
2016, vol.45, no.7
320 × 240 CMOS Array for the Spectral Range of 3-5 μm Based on PtSi Photodiodes
A. M. Belin; V. I. Zolotarev; A. Yu. Nikiforov; A. D. Popov
2016
2016, vol.45, no.7
Efficiency of Frequency Transformation on MOS Transistors with a Built-In Channel under Intensively Handicapped Radioreception
D. V. Zhuravlev; A. I. Mushta
2016
2016, vol.45, no.7
Development and Research of MIS Varicaps with Charge Transfer
Yu. V. Surin; A. B. Spiridonov; S. V. Litsoev
2016
2016, vol.45, no.7
Intelligent System and Electron Components for Controlling Individual Heat Consumption
Yu. I. Shtern; Ya. S. Kozhevnikov; D. B. Rygalin; M. Yu. Shtern; I. S. Karavaev; M. S. Rogachev
2016
2016, vol.45, no.7
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