期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2016, vol.45, no.1 2016, vol.45, no.2 2016, vol.45, no.3 2016, vol.45, no.4 2016, vol.45, no.5 2016, vol.45, no.6
2016, vol.45, no.7 2016, vol.45, no.8/9

题名作者出版年年卷期
Simulation of the Spectroscopic Response and Electron Dynamics in a Double Quantum DotA. V. Tsukanov; V. G. Chekmachev20162016, vol.45, no.1
Influence of the Annealing Temperature on the Ferroelectric Properties of Niobium-Doped Strontium-Bismuth TantalateD. A. Golosov; S. M. Zavadski; V. V. Kolos; A. S. Turtsevich; D. E. Okodzhi20162016, vol.45, no.1
Formation and Certain Properties of Zinc Chalcogenide Nanolayers on Semiconductor MatricesYu. K. Ezhovskii; N. V. Zakharova20162016, vol.45, no.1
Characteristics of Chloride Memristors Based on Nanothick Metal FilmsR. Yu. Rozanov; V. A. Kondrashov; V. K. Nevolin; Yu. A. Chaplygin20162016, vol.45, no.1
System-on-Chip: Specifics of Radiation Behavior and Estimation of Radiation HardnessO. A. Kalashnikov; P. V. Nekrasov; A. Yu. Nikiforov; V. A. Telets; G. V. Chukov; V. V. Elesin20162016, vol.45, no.1
Effect of a Diamond Heat Spreader on the Characteristics of Gallium Nitride-Based TransistorsK. S. Grishakov; V. F. Elesin; N. I. Kargin; R. V. Ryzhuk; S. V. Minnebaev20162016, vol.45, no.1
Influence of Ionizing Radiation on the Parameters of an Operational Amplifier Based on Complementary Bipolar TransistorsO. V. Dvornikov; V. A. Tchekhovski; V. L. Dziatlau; N. N. Prokopenko20162016, vol.45, no.1
Multilayer Graphene-Based Flash MemoryYu. N. Novikov; V. A. Gritsenko; G. Ya. Krasnikov; O. M. Orlov20162016, vol.45, no.1
The Circuit and Functional Blocks for Radiation-Hard Transceiver LSICs in SOI CMOSG. N. Nazarova; V. V. Elesin; A. Yu. Nikiforov; A. G. Kuznetsov; N. A. Usachev; D. M. Amburkin20162016, vol.45, no.1



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