期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2015, vol.44, no.1 2015, vol.44, no.2 2015, vol.44, no.3 2015, vol.44, no.4 2015, vol.44, no.5 2015, vol.44, no.6
2015, vol.44, no.7 2015, vol.44, no.8

题名作者出版年年卷期
Structure Investigation of Large Single Crystals of Gallium Antimonide Grown by the Czochralski Method in the [100] DirectionV. S. Ezhlov; A. G. Mil'vidskaya; E. V. Molodtsova; M. V. Mezhennyi20152015, vol.44, no.8
Enhanced Magnetoresistive Effect in the Arrays of Nickel Nanorods on Silicon SubstratesYu. A. Fedotova; D. K. Ivanov; Yu. A. Ivanova; A. Saad; A. V. Mazanik; I. A. Svito; E. A. Strel'tsov; A. K. Fedotov; S. I. Tyutyunnikov; P. Yu. Apel'20152015, vol.44, no.8
Obtaining Barium Hexaferrite Brand 7BI215 with Improved Isotropic PropertiesI. I. Kaneva; V. G. Kostishin; V. G. Andreev; D. N. Chitanov; A. N. Nikolaev; E. I. Kislyakova20152015, vol.44, no.8
Cellular Automaton Model of Phase Separation during Annealing of Nonstoichiometric Silicon Oxide LayersG. Ya. Krasnikov; N. A. Zaitsev; I. V. Matyushkin; S. V. Korobov20152015, vol.44, no.8
Metal Oxide Nanoparticles Synthesized on Porous Silicon SubstratesI. E. Kononova; A. S. Lenshin; M. G. An'chkov; V. A. Moshnikov20152015, vol.44, no.8
Influence of the Silicon Layer's Properties on the Capacitance Parameters of MIS/SOS StructuresK. L. Enisherlova; V. G. Goryachev; E. M. Temper; S. A. Kapilin20152015, vol.44, no.8
Synthesis of Porous Silicon with Silver Nanoparticles by Low-Energy Ion ImplantationR. I. Batalov; V. F. Valeev; V. I. Nuzhdin; V. V. Vorebev; Yu. N. Osin; D. V. Lebedev; A. A. Bukharaev; A. L. Stepanov20152015, vol.44, no.8
Long-Range Stresses Generated by Misfit Dislocations in Epitaxial FilmsE. M. Trukhanov; A. V. Kolesnikov; I. D. Loshkarev20152015, vol.44, no.8
Boundary Processes in the Electrolyte-Silicon Interface Area during the Self-Organization of the Mosaic Structure of 3D Islets of Porous Silicon Nanocrystallites in the Long-Term Anode Etching of p-Si (100) in Electrolyte with an Internal Current SourceK. B. Tynyshtykbaev; Yu. A. Ryabikin; S. Zh. Tokmoldin; B. A. Rakymetov; T. Aytmukan; Kh. A. Abdullin20152015, vol.44, no.8
Processes during Annealing of Ti-Al-Ni and Ti-Al-Ni-Au Contact Metallization SystemsK. D. Vanyukhin; R. V. Zakharchenko; N. I. Kargin; M. V. Pashkov; L. A. Seidman20152015, vol.44, no.8
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