期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2014, vol.43, no.1 2014, vol.43, no.2 2014, vol.43, no.3 2014, vol.43, no.4 2014, vol.43, no.5 2014, vol.43, no.6
2014, vol.43, no.7 2014, vol.43, no.8

题名作者出版年年卷期
A Distribution of Ga+ Ions in a Silicon Substrate for Nano-Dimensional MaskingI. I. Bobrinetskii; V. K. Nevolin; K. A. Tsarik; A. A. Chudinov20142014, vol.43, no.1
Formation of the Nickel-Platinum Alloy Silicide Schottky BarriersV. A. Solodukha; A. S. Turtsevich; Ya. A. Solov'ev; F. F. Komarov; O. V. Mil'chanin; T. B. Kovaleva; S. V. Gaponenko20142014, vol.43, no.1
Assembly of 3D-Wares with the Use of Wire LeadoutsV. V. Zenin; A. A. Stoyanov; S. V. Petrov; S. Yu. Chistyakov20142014, vol.43, no.1
Effect of HF Discharge Structure on Etch Nonuniformity in Plasma-Chemical ReactorYu. N. Grigor'ev; A. G. Gorobchuk20142014, vol.43, no.1
Formation and Dielectric Properties of Nanolayers of Tantalum and Aluminum OxidesYu. K. Ezhovskii20142014, vol.43, no.1
Simulation of Spatially-Heterogeneous Oxygen Precipitation in Silicon with Allowance for Internal Mechanical StressesR. V. Goldshtein; T. M. Makhviladze; M. E. Sarychev20142014, vol.43, no.1
A Semianalytical Model of a Nanowire-Based Field-Effect TransistorA. N. Khomyakov; V. V. V'yurkov20142014, vol.43, no.1
A Modifying Algorithm of the Topological VLSI Layer by Dummy Filling Features Based on Modeling the Chemical-Mechanical PlanarizationA. V. Amirkhanov; A. A. Gladkykh; V. V. Makarchuk; A. A. Stolyarov; V. A. Shakhnov20142014, vol.43, no.1
Micro Systems Engineering and Digital Holographic Flash MemoryV. A. Zhukov20142014, vol.43, no.1
Investigation of the GaAs Surface after Etching in the Plasma of Mixtures HCI/Ar, HCl/Cl_2, and HCI/H_2 by Atomic-Force MicroscopyA. V. Dunaev20142014, vol.43, no.1



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