期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2013, vol.42, no.1 2013, vol.42, no.2 2013, vol.42, no.3 2013, vol.42, no.4 2013, vol.42, no.5 2013, vol.42, no.6
2013, vol.42, no.7 2013, vol.42, no.8

题名作者出版年年卷期
Quantum Operations on Charge Qubits with the Electrostatic Control in Semiconductor CavitiesA. V. Tsukanov; I. Yu. Kateev20132013, vol.42, no.4
Plasma Parameters and Mechanisms of GaAs Reactive Plasma Etching in Mixtures of HCl with Argon and ChlorineA. V. Dunaev; S. A. Pivovarenok; A. M. Efremov; V. I. Svettsov; S. P. Kapinos; A. V. Yudina20132013, vol.42, no.4
Influence of Doping the Base Surface on Parameters of a Bipolar Dual-Collector Lateral MagnetotransistorA. Yu. Krasyukov; R. D. Tikhonov; A. A. Cheremisinov20132013, vol.42, no.4
Simulating the Deposition and Synthesis of Amorphous Hydrogenated Carbon FilmsV. A. Tarala20132013, vol.42, no.4
Formation of the Wave Nanorelief at Surface Erosion by Ion Bombardment within the Bradley-Harper ModelA. V. Metlitskaya; A. N. Kulikov; A. S. Rudy20132013, vol.42, no.4
Photovoltaic Effect in a Structure Based on Amorphous and Nanoporous Silicon Formed by Plasma Immersion Ion ImplantationA. V. Myakon'kikh; A. E. Rogozhin; K. V. Rudenko; V. F. Lukichev20132013, vol.42, no.4
The Behavioral Model of a Split Capacitor Array Involved in the Successive Approximation Register ADC and Taking into Account the Effect of Parasitic CapacitorsD. L. Osipov; Yu. I. Bocharov; V. A. Butuzov20132013, vol.42, no.4