期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2011, vol.40, no.1 2011, vol.40, no.2 2011, vol.40, no.3 2011, vol.40, no.4 2011, vol.40, no.5 2011, vol.40, no.6
2011, vol.40, no.7 2011, vol.40, no.8

题名作者出版年年卷期
Electrical Parameters and the Plasma Composition in HCl-H_2 MixturesA. M. Efremov; A. V. Yudina; V. I. Svettsov20112011, vol.40, no.6
Spectral Study of HCl Plasma Etching of Gallium ArsenideA. V. Dunaev; S. A. Pivovarenok; S. P. Kapinos; A. M. Efremov; V. I. Svettsov20112011, vol.40, no.6
Formation of Thin-Film HfO_2/Si(100) Structures by High-Frequency Magnetron SputteringV. I. Rudakov; E. A. Bogoyavlenskaya; Yu. I. Denisenko; V. V. Naumov20112011, vol.40, no.6
Control of the Formation of Ultrathin CoSi_2 Layers during the Rapid Thermal Annealing of Ti/Co/Ti/Si(100) StructuresV. I. Rudakov; Yu. I. Denisenko; V. V. Naumov; S. G. Simakin20112011, vol.40, no.6
Wave Phenomena in the Finishing of Diamond CrystalsS. M. Pintus; V. Yu. Karasev; E. V. Gladchenkov20112011, vol.40, no.6
Low-Temperature Pulsed Vapor-Phase Deposition of Thin Layers of Metal Ruthenium for Micro- and Nanoelectronics. Part 5. Interrelation of Growth Regularities, Structure, and Properties of Ruthenium LayersV. Yu. Vasilyev20112011, vol.40, no.6
Optical Maskless LithographyG. V. Belokopytov; Yu. V. Ryzhkova20112011, vol.40, no.6
Determination of the Size of Vacancy-Type Defects in Angstrom Ranges by Positron Annihilation SpectroscopyV. I. Grafutin; I. N. Meshkov; E. P. Prokop'ev; N. O. Khmelevskii; S. L. Yakovenko20112011, vol.40, no.6
Scanning Electron Microscopy Used to Measure the Feature Dimensions of a Nanoscale Test Pattern on a Silicon SurfaceV. P. Gavrilenko; Yu. V. Larionov; V. B. Mityukhlyaev; A. V. Rakov; P. A. Todua; M. N. Filippov; V. A. Sharonov20112011, vol.40, no.6



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