期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2011, vol.40, no.1 2011, vol.40, no.2 2011, vol.40, no.3 2011, vol.40, no.4 2011, vol.40, no.5 2011, vol.40, no.6
2011, vol.40, no.7 2011, vol.40, no.8

题名作者出版年年卷期
Optimization of the Tomographic Algorithm of the Reconstruction of Plasma Irregularities in Process Reactors of MicroelectronicsA. V. Fadeev; K. V. Rudenko; V. F. Lukichev; A. A. Orlikovskii20112011, vol.40, no.2
Subthreshold Schmitt Trigger Using Body-Bias Technique for Ultra Low Power and High Performance ApplicationsVandana Niranjan; Maneesha Gupta; Nupur Pzakash20112011, vol.40, no.2
New CMOS Circuit Implementation of a One-Bit Full-Adder CellV. V. Shubin20112011, vol.40, no.2
Simulation of Formation of Nanostructures during Sputtering of the Surface by Ion BombardmentA. S. Rudyi; A. N. Kulikov; A. V. Metlitskaya20112011, vol.40, no.2
Double-Balanced Mixer Based on MOSFETsA. S. Korotkov20112011, vol.40, no.2
Oscillating Transient Currents in PbSnTe:In in a Backgroundless ModeA. N. Akimov; A. E. Klimov; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova; V. N. Shumskii20112011, vol.40, no.2
The Influence of the Sizes of the Cross Section of Mesapiezoresistors on Their CharacteristicsV. A. Gridchin; A. S. Cherkaev; M. A. Chebanov; V. B. Zinov'ev; I. G. Neizvestnyi; G. N. Kamaev20112011, vol.40, no.2
The Investigation of the Radiation Behavior of Cells of Energy-Independent Electrically Reprogrammable Memory Based on Self-Formed Conducting Nanostructures. I. Mode of Information StorageV. M. Mordvintsev; A. V. Sogoyan; S. E. Kudryavtsev; V. L. Levin20112011, vol.40, no.2