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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2011, vol.40, no.1
2011, vol.40, no.2
2011, vol.40, no.3
2011, vol.40, no.4
2011, vol.40, no.5
2011, vol.40, no.6
2011, vol.40, no.7
2011, vol.40, no.8
题名
作者
出版年
年卷期
Optimization of the Tomographic Algorithm of the Reconstruction of Plasma Irregularities in Process Reactors of Microelectronics
A. V. Fadeev; K. V. Rudenko; V. F. Lukichev; A. A. Orlikovskii
2011
2011, vol.40, no.2
Subthreshold Schmitt Trigger Using Body-Bias Technique for Ultra Low Power and High Performance Applications
Vandana Niranjan; Maneesha Gupta; Nupur Pzakash
2011
2011, vol.40, no.2
New CMOS Circuit Implementation of a One-Bit Full-Adder Cell
V. V. Shubin
2011
2011, vol.40, no.2
Simulation of Formation of Nanostructures during Sputtering of the Surface by Ion Bombardment
A. S. Rudyi; A. N. Kulikov; A. V. Metlitskaya
2011
2011, vol.40, no.2
Double-Balanced Mixer Based on MOSFETs
A. S. Korotkov
2011
2011, vol.40, no.2
Oscillating Transient Currents in PbSnTe:In in a Backgroundless Mode
A. N. Akimov; A. E. Klimov; I. G. Neizvestnyi; N. S. Pashchin; V. N. Sherstyakova; V. N. Shumskii
2011
2011, vol.40, no.2
The Influence of the Sizes of the Cross Section of Mesapiezoresistors on Their Characteristics
V. A. Gridchin; A. S. Cherkaev; M. A. Chebanov; V. B. Zinov'ev; I. G. Neizvestnyi; G. N. Kamaev
2011
2011, vol.40, no.2
The Investigation of the Radiation Behavior of Cells of Energy-Independent Electrically Reprogrammable Memory Based on Self-Formed Conducting Nanostructures. I. Mode of Information Storage
V. M. Mordvintsev; A. V. Sogoyan; S. E. Kudryavtsev; V. L. Levin
2011
2011, vol.40, no.2
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