期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2010, vol.39, no.1 2010, vol.39, no.2 2010, vol.39, no.3 2010, vol.39, no.4 2010, vol.39, no.5 2010, vol.39, no.6

题名作者出版年年卷期
Nano- and Micrometer-Scale Thin-Film-Interconnection Failure Theory and Simulation and Metallization Lifetime Prediction, Part 2: Polycrystalline-Line Degradation and Bulk FailureK. A. Valiev; R. V. Goldstein; Yu. V. Zhitnikov; T. M. Makhviladze; M. E. Sarychev20102010, vol.39, no.3
Mathematical Simulation of the Processes of Generation of "Shock Waves" in a Two-Dimensional Electron Gas in the Channel of a Ballistic Field-Effect TransistorI. A. Semenikhin; E. A. Vostrikova20102010, vol.39, no.3
Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of NanoelectronicsA. V. Zenkevich; Yu. Yu. Lebedinskii; Yu. A. Matveev; N. S. Barantsev; Yu. A. Voronov; A. V. Sogoyan; V. N. Nevolin; V. I. Chichkov; S. Spiga; M. Fanchulli20102010, vol.39, no.3
Effect of Broadening the Discrete Levels of the Granule on the Character of the Current - Voltage Characteristic of a Single-Electron DiodeA. V. Babich; V. V. Pogosov; A. M. Baginskii; N. N. Nagornaya; A. G. Kravtsova20102010, vol.39, no.3
Chemical Nanotechnology of Oxide and Nitride Low-Dimensional Structures on a Semiconductor MatrixYu. K. Ezhovskii20102010, vol.39, no.3
Self-Organization of Germanium Highly Ordered Nanoclusters by the Deposition of Polycrystalline Silicon Films Doped with GermaniumA. A. Kovalevskii; N. V. Babushkina; D. V. Plyakin; A. C. Strogova20102010, vol.39, no.3
Low Temperature Pulsed Gas-Phase Deposition of Thin Layers of Metallic Ruthenium for Micro- and Nanoelectronics: Part 2. Kinetics of the Growth of Ruthenium LayersV. Yu. Vasilyev20102010, vol.39, no.3
Delta-Sigma Modulator with a 50-MHz Sampling Rate Implemented in 0.18-μm CMOS TechnologyA. S. Korotkov; M. M. Pilipko; D. V. Morozov; J. Hauer20102010, vol.39, no.3



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