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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2010, vol.39, no.1
2010, vol.39, no.2
2010, vol.39, no.3
2010, vol.39, no.4
2010, vol.39, no.5
2010, vol.39, no.6
题名
作者
出版年
年卷期
Single-Event-Effect Prediction for ICs in a Space Environment
A. I. Chumakov; A. L. Vasil'ev; A. A. Kozlov; D. O. Kol'tsov; A. V. Krinitskii; A. A. Pechenkin; A. S. Tararaksin; A. V. Yanenko
2010
2010, vol.39, no.2
Features of Design of Submicron CMOS of Static RAMs with an Increased Failure Resistance to the Effect of High-Energy Particles
V. Ya. Stenin; I. G. Cherkasov
2010
2010, vol.39, no.2
Conversion Model of Enhanced Low-Dose-Rate Sensitivity for Bipolar ICs
V. S. Pershenkov; D. V. Savchenkov; A. S. Bakerenkov; V. N. Ulimov
2010
2010, vol.39, no.2
Methods of Construction of the Criterial Membership Function for the Prediction of Functional Failures of Large-Scale Integrated Circuits under the Effect of Radiative and Electromagnetic Radiations
V. M. Barbashov
2010
2010, vol.39, no.2
Radiation-Induced Breakdown of a Nonuniformly Doped PN Junction
A. S. Puzanov; S. V. Obolensky
2010
2010, vol.39, no.2
The Effect of Ionizing Radiation on the Characteristics of Silicon-Germanium Microwave Integrated Circuits
V. V. Elesin; G. V. Chukov; D. V. Gromov; V. V. Repin; V. A. Vavilov
2010
2010, vol.39, no.2
Design of Passive Elements for Monolithic Silicon-Germanium Microwave ICs Tolerant to Ionizing Radiation
V. V. Elesin; G. N. Nazarova; N. A. Usachev
2010
2010, vol.39, no.2
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