期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2009, vol.38, no.1 2009, vol.38, no.2 2009, vol.38, no.3 2009, vol.38, no.4 2009, vol.38, no.5 2009, vol.38, no.6

题名作者出版年年卷期
Plasma Parameters and Etching Mechanisms of Metals and Semiconductors in Hydrogen ChlorideA. M. Efremov; S. A. Pivovarenok; V. I. Svettsov20092009, vol.38, no.3
Obtaining Multicomponent Films by the Plasma-Stimulated MethodV. F. Bochkarev; V. V. Ovcharov20092009, vol.38, no.3
The Effect of Electromagnetic Fields on the Process of Formation of Ultrathin Fe-Ni Films during Their Deposition under a Plasma-Stimulated DepositionV. F. Bochkarev; E. Yu. Buchin20092009, vol.38, no.3
Mathematical Simulation of an Inclined Neutralization Channel for a Plasma Source of Neutral BeamsA. V. Degtyarev; V. P. Kudrya; Yu. P. Maishev20092009, vol.38, no.3
A Study of the Magnetic Characteristics of Permalloy Nanostructures by Micromagnetic SimulationO. S. Trushin; N. Barabanova; V. P. Alekseev20092009, vol.38, no.3
Analysis of the Dipole Matrix Elements of Electronic Optical Transitions in the (P_2)~+/Si SystemA. N. Voron'ko20092009, vol.38, no.3
The Computable Measure of Quantum Entanglement of Multiqubit StatesA. Yu. Chernyavskiy20092009, vol.38, no.3
The Design of Ternary Logic Units on the Basis of the Standard MOS TechnologyD. V. Morozov; M. M. Pilipko; A. S. Korotkov20092009, vol.38, no.3
Flip-flop Device with State ActuationN. M. Saf'yannikov; P. N. Bondarenko20092009, vol.38, no.3



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