期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2009, vol.38, no.1 2009, vol.38, no.2 2009, vol.38, no.3 2009, vol.38, no.4 2009, vol.38, no.5 2009, vol.38, no.6

题名作者出版年年卷期
Specific Features of Radiation-Stimulated Breakdown of a Nonuniformly Doped p-n JunctionA. S. Puzanov; S. V. Obolensky20092009, vol.38, no.1
Operability Analysis of Submicron CMOS-Based VLSI RAMs Operated under Extreme Thermal ConditionsA. A. Krasnyuk; V. Ya. Stenin; I. G. Cherkasov; A. V. Yakovlev20092009, vol.38, no.1
Calculation of Surface Recombination Current in Bipolar Microelectronic Structures Subjected to Ionizing RadiationV. S. Pershenkov; D. V. Savchenkov; A. S. Bakerenkov; A. S. Egorov20092009, vol.38, no.1
Prospects for Using Submicron CMOS VLSI in Fault-Tolerant Equipment Operating Under Exposure to Atmospheric NeutronsV. B. Betelin; S. V. Baranov; S. G. Bobkov; A. A. Krasnyuk; P. N. Osipenko; V. Ya. Stenin; I. G. Cherkasov; A. I. Chumakov; A. V. Yanenko20092009, vol.38, no.1
Functional-Logical Simulation of Quality of Functioning Integrated Circuits Under the Effect of Radiation and Electromagnetic FieldV. M. Barbashov; N. S. Trushkin20092009, vol.38, no.1
Experimental Studies of the Adequacy of Laser Simulations of Dose Rate Effects in Integrated Circuits and Semiconductor DevicesA. Yu. Nikiforov; P. K. Skorobogatov; A. I. Chumakov; A. V. Kirgizova; A. G. Petrov; P. P. Kutsko; A. V. Kuzmin; A. A. Borisov; V. A. Telets; V. T. Punin; V. S. Figurov20092009, vol.38, no.1



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024