期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
Piezoelectric GaN Sensor StructuresT. Zimmermann; M. Neuburger; P. Benkart; F. J. Hernandez-Guillen; C. Pietzka; M. Kunze; I. Daumiller; A. Dadgar; A. Krost; E. Kohn20062006, vol.27, no.5
Collector-Pedestal InGaAs/InP DHBTs Fabricated in a Single-Growth, Triple-Implant ProcessNavin Parthasarathy; Zach Griffith; Christoph Kadow; Uttam Singisetti; Mark J. W. Rodwell; Xiao-Ming Fang; Dmitri Loubychev; Joel M. Fastenau; Amy W. K. Liu20062006, vol.27, no.5
Microwave Performance of GaAs MOSFET With Wet Thermally Oxidized InAlP Gate DielectricY. Cao; X. Li; J. Zhang; P. Fay; T. H. Kosel; D. C. Hall20062006, vol.27, no.5
Stress-Induced Local Trap Levels in Au/n-GaAs Schottky Diodes With Embedded InAs Quantum DotsA. Tsormpatzoglou; D. H. Tassis; C. A. Dimitriadis; P. Frigeri; S. Franchi; E. Gombia; R. Mosca20062006, vol.27, no.5
Vertical High-Mobility Wrap-Gated InAs Nanowire TransistorTomas Bryllert; Lars-Erik Wernersson; Linus E. Froberg; Lars Samuelson20062006, vol.27, no.5
Demonstration of 13.56-MHz Class-E Amplifier Using a High-Voltage GaN Power-HEMTWataru Saito; Tomokazu Domon; Ichiro Omura; Masahiko Kuraguchi; Yoshiharu Takada; Kunio Tsuda; Masakazu Yamaguchi20062006, vol.27, no.5
Temperature-Dependent Electroluminescence of AlGaN-Based UV LEDsX. A. Cao; S. F. LeBoeuf; T. E. Stecher20062006, vol.27, no.5
On the Impact of TiN Film Thickness Variations on the Effective Work Function of Poly-Si/TiN/SiO{sub}2 and Poly-Si/TiN/HfSiON Gate StacksR. Singanamalla; H. Y. Yu; G. Pourtois; I. Ferain; K. G. Anil; S. Kubicek; T. Y. Hoffmann; M. Jurczak; S. Biesemans; K. De Meyer20062006, vol.27, no.5
Three-Dimensional Wafer Stacking Via Cu-Cu Bonding Integrated With 65-nm Strained-Si/Low-k CMOS TechnologyP. R. Morrow; C.-M. Park; S. Ramanathan; M. J. Kobrinsky; M. Harmes20062006, vol.27, no.5
Compact Physical Models for Multiwall Carbon-Nanotube InterconnectsAzad Naeemi; James D. Meindl20062006, vol.27, no.5
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