期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2006, vol.35, no.1 2006, vol.35, no.2 2006, vol.35, no.4 2006, vol.35, no.5 2006, vol.35, no.6

题名作者出版年年卷期
High-Dielectric-Constant Medium Used to Increase Qubit SpacingA. E. Klimov; V. A. Nadolinnyi; I. G. Neizvestny; S. P. Suprun; Yu. A. Tsidulko; V. N. Shumsky20062006, vol.35, no.5
Modeling the ESR Spectra of a Zn-P Two-Spin System in Si: The Structure of the Semiempirical Relaxation Operator Incorporated in the Quantum Liouville EquationS. N. Dobryakov; V. V. Privezentsev20062006, vol.35, no.5
New Vistas for Diamond as an Electronic MaterialV. Yu. Karasev; V. D. Kryukov; S. M. Pintus; M. G. Kuznetsov; A. A. Lykov; B. A. Belov20062006, vol.35, no.5
Evaluation of Focused O{sup}+ Ion Beams as a Tool for Making Resist Masks by Reactive EtchingV. A. Zhukov; A. I. Titov; N. T. Bagraev; M. M. Nesterov20062006, vol.35, no.5
Effect of Ionizing Irradiation and Thermal Annealing on the Entropy of the Atomic System of a SiO{sub}2 FilmV. D. Popov; G. A. Protopopov20062006, vol.35, no.5
Structure, Shape, and Orientation of an Island Adsorbed on a Single-Crystal Surface in the Case of Lattice MismatchYu. N. Devyatko; S. V. Rogozhkin; A. V. Fadeev20062006, vol.35, no.5
Structure of Neutron-Induced Defect Clusters in GaAs MESFETsE. V. Kiseleva; S. V. Obolenskii20062006, vol.35, no.5
X-ray or UV Adjustment of MOS Threshold Voltage: Analytical and Numerical ModelingM. N. Levin; A. V. Tatarintsev; V. A. Makarenko; V. R. Gitlin20062006, vol.35, no.5
Transistor-Degradation Prediction by Time-Series AnalysisM. I. Gorlov; A. V. Strogonov; D. Yu. Smirnov20062006, vol.35, no.5



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