期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2006, vol.35, no.1 2006, vol.35, no.2 2006, vol.35, no.4 2006, vol.35, no.5 2006, vol.35, no.6

题名作者出版年年卷期
Electrical Behavior of Modulation- and Delta-DopedG. B. Galiev; I. S. Vasil'evskii; E. A. Klimov; V. G. Mokerov20062006, vol.35, no.2
Cold Atoms in Optical Lattices as Qubits for a Quantum ComputerD. B. Tretyakov; I. I. Beterov; V. M. Entin; I. I. Ryabtsev20062006, vol.35, no.2
Electroluminescence Mechanisms in SiO{sub}xN{sub}y(Si) Nanocomposite FilmsV. G. Baru; V. A. Zhitov; L. Yu. Zakharov; A. N. Izotov; V. I. Pokalyakin; G. V. Stepanov; O. F. Shevchenko; E. A. Shteinman20062006, vol.35, no.2
Progression of an Excess-Carrier Pulse in Zn-Compensated P-Doped Si Exposed to an Electric Field Close to the Recombination-Wave ThresholdB. V. Kornilov; V. V. Privezentsev20062006, vol.35, no.2
Influence of Background Impurities on the Formation of Stacking Faults in Silicon WafersD. I. Brinkevich; V. S. Prosolovich; S. A. Vabishchevich; A. N. Petlitskii20062006, vol.35, no.2
Multiplex Fourier-Transform Spectroscopy in the Characterization of Stochastic Inhomogeneous Film Growth: A Conceptual FrameworkV. A. Kotenev20062006, vol.35, no.2
Reading Sensitivity of a New Thermomechanical Data-Storage Technique: The Effect of Reducing Probe DimensionsA. B. Petrin20062006, vol.35, no.2
Inclusion-Exclusion Principle in the Design of a BIST Unit for LSI and VLSI CircuitsI. P. Kobyak20062006, vol.35, no.2
Transient Analysis of RC On-Chip Transmission Lines with Respect to Propagation SpeedV. B. Fyodorov20062006, vol.35, no.2



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024