期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
A novel InP/InGaAs TEBT for ultralow current operationsChun-Yuan Chen; Shiou-Ying Cheng; Wen-Hui Chiou; Hung-Ming Chuang; Wen-Chau Liu20032003, vol.24, no.3
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodesS. J. Chang; C. H. Chen; Y. K. Su; J. K. Sheu; W. C. Lai; J. M. Tsai; C. H. Liu; S. C. Chen20032003, vol.24, no.3
DC and RF characteristics of E-mode Ga{sub}0.51In{sub}0.49P-In{sub}0.15Ga{sub}0.85As pseudomorphic HEMTsHsing-Yuan Tu; Tao-Hsuan Chou; Yo-Sheng Lin; Hsien-Chin Chiu; Ping-Yu Chen; Wen-Chung Wu; Shey-Shi Lu20032003, vol.24, no.3
High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-In GaAs substratesD. C. Dumka; H. Q. Tserng; M. Y. Kao; E. A. Beam, III; P. Saunier20032003, vol.24, no.3
High-performance 450-GHz GaAs-based heterostructure barrier varactor triplerM. Saglam; B. Schumann; K. Duwe; C. Domoto; A. Megej; M. Rodriguez-Girones; J. Muller; R. Judaschke; H. L. Hartnagel20032003, vol.24, no.3
Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTsHuili Xing; Prashant M. Chavarkar; Stacia Keller; Steven P. DenBaars; Umesh K. Mishra20032003, vol.24, no.3
Effects of deuterium anneal on MOSFETs with HfO{sub}2 gate dielectricsRino Choi; Katsunori Onishi; Chang Seok Kang; Hag-Ju Cho; Y. H. Kim; Siddharth Krishnan; M. S. Akbar; Jack C. Lee20032003, vol.24, no.3
Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene linesF. Iacopi; Zs. Tokei; M. Stucchi; F. Lanckmans; K. Maex20032003, vol.24, no.3
Engineering of nitrogen profile in an ultrathin gate insulator to improve transistor performance and NBTITakaoki Sasaki; Kazunobu Kuwazawa; Kazuo Tanaka; Juri Kato; Dim-Lee Kwong20032003, vol.24, no.3
Wide range work function modulation of binary alloys for MOSFET applicationBing-Yue Tsui; Chih-Feng Huang20032003, vol.24, no.3
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