期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2002, vol.31, no.1 2002, vol.31, no.2 2002, vol.31, no.3 2002, vol.31, no.4 2002, vol.31, no.5 2002, vol.31, no.6

题名作者出版年年卷期
Linear standard for SEM-AFM microelectronics dimensional metrology in the range 0.01-100μmCh. P. Volk; E. S. Gornev; Yu. A. Novikov; Yu. V. Ozerin; Yu. I. Plotnikov; A. M. Prokhorov; A. V. Rakov20022002, vol.31, no.4
ULSI gap filling with a thin CVD SiO-based insulator: a reviewV. Y. Vassiliev20022002, vol.31, no.4
DeleCut: producing high-quality SOI structures by hydrogen ion implantationV. P. Popov; I. V. Antonova; A. A. Frantsuzov; L. N. Safronov; A. I. Popov; O. V. Naumova; A. Kh. Antonenko; D. V. Kilanov; I. V. Mironova20022002, vol.31, no.4
Photoresists used as mask materials in ion implantation for the CMOS technology: optimizing mask thicknessS. V. Gran'ko; F. F. Komarov; A. V. Leont'ev20022002, vol.31, no.4
Open microwave resonator used for the characterization of a helicon-source plasmaYu. P. Baryshev; I. N. Moskalev; I. P. Koritkin; A. A. Orlikovsky; A. O. Prokof'ev20022002, vol.31, no.4
Lateral injection utilized for improving the performance of microwave bipolar transistorsYu. P. Snitovskii20022002, vol.31, no.4
Carrier trapping and scattering in Ge-doped SiO{sub}2D. I. Brinkevich; V. S. Prosolovich; Yu. N. Yankovskii20022002, vol.31, no.4
Polarity-dependent electrical mass transfer in silicon: the location and shape of the metal-like bridgeB. A. Panfilov20022002, vol.31, no.4
Structural and behavioral irreproducibility of solid materials: a new insight into the problemN. V. Bodyagin; S. P. Vikhrov; S. M. Mursalov; I. V. Tarasov20022002, vol.31, no.4
Effect of gamma irradiation on the surface morphology of SOS filmsA. N. Kiselev; G. A. Maksimov; V. A. Perevoshchikov; V. D. Skupov; D. O. Filatov20022002, vol.31, no.4



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