期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A > 400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technologyQ. Lee; B. Agarwal; D. Mensa; R. Pullela; J. Guthrie; L. Samoska; M. J. W. Rodwell19981998, vol.19, no.3
A multilevel approach toward quadrupling the density of flash memoryDavid L. Kencke; Robert Richart; Shyam Garg; Sanjay K. Banerjee19981998, vol.19, no.3
Electrostatic adhesion testing of thin metallizationsD. L. Callahan; H. Yang; F. R. Brotzen; A. J. Griffin, Jr.; C. F. Dunn19981998, vol.19, no.3
Evaluation of plasma charging damage in ultrathin gate oxidesHorng-Chih Lin; Chi-Chun Chen; Chao-Hsing Chien; Szu-Kang Hsein; Meng-Fan Wang; Tien-Sheng Chao19981998, vol.19, no.3
High-speed and low-power operation of a resonant tunneling logic gate MOBILEKoichi Maezawa; Hideaki Matsuzaki; Masafumi Yamamoto; Taiichi Otsuji19981998, vol.19, no.3
High-transconductance delta-doped InAs/AlSb HFET's with ultrathin silicon-doped InAs quantum well donor layerC. R. Bolognesi; M. W. Dvorak; D. H. Chow19981998, vol.19, no.3
P-type 4H and 6H-SiC high-voltage Schottky barrier diodesR. Raghunathan; B. J. Baliga19981998, vol.19, no.3
Self-heating in high-power AlGaN-GaN HFET'sR. Gaska; A. Osinsky; J. W. Yang; M. S. Shur19981998, vol.19, no.3
Transistor operation of 30-nm gate-length EJ-MOSFET'sHisao Kawaura; Toshitsugu Sakamoto; Toshio Baba; Yukinori Ochiai; Jun'ichi Fujita; Shinji Matsui19981998, vol.19, no.3



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