期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A deep submicron Si1-xGex/Si vertical PMOSFET fabricated by Ge Ion implantationK. C. Liu; S. K. Ray; S. K. Oswal; S. K. Banerjee19981998, vol.19, no.1
A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET'sD. S. Ang; C. H. Ling19981998, vol.19, no.1
A novel self-aligned T-shaped gate process for deep submicron Si MOSFET's fabricationH.-C. Lin; R. Lin; W.-F. Wu; R.-P.Yang; M.-S. Tsai; T.-S.Chao; T.-Y. Huang19981998, vol.19, no.1
Air-gap formation during IMD deposition to lower interconnect capacitanceB. Shieh; K. C. Saraswat; J. P. McVittie; S. List; S. Nag; M. Islamraja; R. H. Havemann19981998, vol.19, no.1
Laser energy limitation for buried metal cutsJ. B. Bernstein; Y. Hua; W. Zhang19981998, vol.19, no.1
Plasma charging damage on ultrathin gate oxidesD. Park; C. Hu19981998, vol.19, no.1
RTD/HFET low standby power SRAM gain cellJ. P. A. van der Wagt; A. C. Seabaugh; E. A. Beam Ⅲ19981998, vol.19, no.1
The importance of electrochemistry-related etching in the gate-groove fabrication for InAlAs/InGaAs HFET'sD. Xu; T. Enoki; Y. Ishii19981998, vol.19, no.1
Theoretical analysis of kink effect in C-V characteristics of indium-implanted NMOS capacitorsP. Bouillon; T. Skotnicki19981998, vol.19, no.1



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